Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 77
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD2104MS8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6384ED013TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
Tape & Reel (TR) - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
Cut Tape (CT) - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
- - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED
STMicroelectronics
1,049
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
Tube - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6741TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
Tape & Reel (TR) - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 N-Channel MOSFET 41V - 1V,2.3V 2A,2A
L6741TR
STMicroelectronics
4,120
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
Cut Tape (CT) - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 N-Channel MOSFET 41V - 1V,2.3V 2A,2A
L6741TR
STMicroelectronics
4,120
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
- - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 N-Channel MOSFET 41V - 1V,2.3V 2A,2A
L6741
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER HI CURNT 8SOIC
Tube - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 N-Channel MOSFET 41V - 1V,2.3V 2A,2A
DGD1504S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1504S8-13
Diodes Incorporated
2,301
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1504S8-13
Diodes Incorporated
2,301
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104AS8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2104AS8-13
Diodes Incorporated
2,455
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2104AS8-13
Diodes Incorporated
2,455
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
L6571AD013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF-BRG W/OSC HV 8-SOIC
Tape & Reel (TR) - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
L6571AD013TR
STMicroelectronics
1,242
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF-BRG W/OSC HV 8-SOIC
Cut Tape (CT) - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
L6571AD013TR
STMicroelectronics
1,242
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF-BRG W/OSC HV 8-SOIC
- - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA