- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 15
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
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|
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
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|
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
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|
|
pSemi |
500
|
3 jours |
-
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MOQ: 500 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | - | Half-Bridge | 2 | N-Channel MOSFET | 2.5ns，2.5ns | - | 2A，4A | ||
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|
|
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | - | Half-Bridge | 2 | N-Channel MOSFET | 2.5ns，2.5ns | - | 2A，4A | ||
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|
|
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | - | Half-Bridge | 2 | N-Channel MOSFET | 2.5ns，2.5ns | - | 2A，4A | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HV 10-WDFN
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
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Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 40ns，20ns | - | 1.2A，1.2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 40ns，20ns | - | 1.2A，1.2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
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- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 40ns，20ns | - | 1.2A，1.2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 180 MPQ: 1
|
IC DVR FULL BRIDGE HI/LOW 16SOIC
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 40ns，20ns | - | 1.2A，1.2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 190 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
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Tube | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
HIGH SIDE AND LOW SIDE GA
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Tape & Reel (TR) | Automotive，AEC-Q100 | 8 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | High-Side or Low-Side | 2 | N-Channel MOSFET | 6ns，4ns | 2V，1.8V | 3A，6A |
