- Packaging：
-
- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 27
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tape & Reel (TR) | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | - | Half-Bridge | 2 | N-Channel MOSFET | 600V | - | - | - | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRVR HALF BRIDGE 16SOIC
|
Tube | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | - | Half-Bridge | 2 | N-Channel MOSFET | 600V | - | - | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1.2A，1.2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1.2A，1.2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1.2A，1.2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMPLEMNT SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DVR FULL BRIDGE HI/LOW 16SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1.2A，1.2A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET HALF BRIDGE DVR 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET HALF BRIDGE DVR 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET HALF BRIDGE DVR 16SOIC
|
- | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMP SWITCH FET DRIVER 16SOIC
|
Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMP SWITCH FET DRIVER 16SOIC
|
Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMPLEMNT SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC COMP SW FET DRVR 16-SOIC
|
Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
|
|
Linear Technology/Analog Devices |
449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | - | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
|
|
Linear Technology/Analog Devices |
2,202
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | - | 5 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Tape & Reel (TR) | - | 20V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | - | High-Side or Low-Side | - | IGBT | - | 18ns，19ns | - | 7.8A，6.8A |
