- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 498
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
322
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRV SGL 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Renesas Electronics America Inc. |
771
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR SNGL 8-DIP
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Bulk | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
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Texas Instruments |
217
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL 2A COMP FET DRIVER 8-DIP
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Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
531
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
3,142
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
7,607
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LOW SIDE 8DIP
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Tube | 12 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Texas Instruments |
133
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 8-DIP
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Tube | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-PDIP | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
149
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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Microchip Technology |
839
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HI/LOSIDE 8-DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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IXYS Integrated Circuits Division |
633
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Infineon Technologies |
997
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Microchip Technology |
932
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Infineon Technologies |
108
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Texas Instruments |
282
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC PERIPHERAL DRVR DUAL HV 8-DIP
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Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
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Infineon Technologies |
165
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
253
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
41
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | 1A，1A | ||
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Texas Instruments |
680
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL HS 4A 8-DIP
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Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Infineon Technologies |
228
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR CURR SENSE 1CH 600V 8DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA |
