- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 68
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
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Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
2,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Texas Instruments |
3,794
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Infineon Technologies |
195
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Texas Instruments |
3,352
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT MOSFET DRVR 8-DIP
|
4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-PDIP | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
|
|
|
Texas Instruments |
3,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-PDIP | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT POWER DRIVER 8-DIP
|
5 V ~ 40 V | 0°C ~ 70°C (TA) | 8-PDIP | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-DIP
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A COMP FET DRIVER 8-DIP
|
4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-PDIP | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Texas Instruments |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENTARY PWR DRVR 8-DIP
|
5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-PDIP | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Maxim Integrated |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Texas Instruments |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
222
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-DIP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A MOSFET 8 DIP DUAL INV/NON-INV
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 8.3V，12.6V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA |
