- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 166
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,946
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
1,719
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET DVR ULT FAST 14A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Infineon Technologies |
2,399
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH SIDE DRIVER SGL 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Texas Instruments |
3,959
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
3,074
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
3,611
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Maxim Integrated |
200
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
2,350
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Infineon Technologies |
2,200
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LIMITING 8-DIP
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Tube | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Texas Instruments |
3,352
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT MOSFET DRVR 8-DIP
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Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Infineon Technologies |
3,000
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,958
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
2,942
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 600V 200/420MA 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Texas Instruments |
2,990
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT POWER DRIVER 8-DIP
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Tube | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
527
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Maxim Integrated |
322
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRV SGL 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Renesas Electronics America Inc. |
771
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR SNGL 8-DIP
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Bulk | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
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Infineon Technologies |
7,607
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LOW SIDE 8DIP
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Tube | 12 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Texas Instruments |
133
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 8-DIP
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Tube | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-PDIP | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Microchip Technology |
839
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HI/LOSIDE 8-DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | High-Side or Low-Side | N-Channel MOSFET | - | - | 0.8V，2V | - |
