- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
-
- Channel Type:
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- Driven Configuration:
-
- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 30
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 4A,4A | ||||
Infineon Technologies |
2,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 1.9A,2.3A | ||||
Infineon Technologies |
245
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
2,967
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
165
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
|
12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
799
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 200V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER
|
6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HALF BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HALF BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
|
9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 1.9A,2.3A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRIVER LS 4A DUAL 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRIVER LS 4A DUAL 8DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 4A,4A |