- Voltage - Supply：
-
- Operating Temperature：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
Découvrez les produits 10
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
Infineon Technologies |
2,599
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | ||
|
|
|
Infineon Technologies |
41
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
HI/LO SIDE DRVR 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | ||
|
|
|
Vishay Siliconix |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR ADAPTIVE PWR 8DIP
|
10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | ||
|
|
Microchip Technology |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HI-SPEED 8DIP
|
4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
|
|
Microchip Technology |
152
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8DIP
|
4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 660 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS N-INV 8DIP
|
4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V |
