- Operating Temperature:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 17
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
409
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
0°C ~ 70°C (TA) | Inverting | High-Side or Low-Side | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Texas Instruments |
2,949
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
-55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
-40°C ~ 125°C (TJ) | Inverting | Low-Side | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
3,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
0°C ~ 70°C (TA) | Inverting | High-Side or Low-Side | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Texas Instruments |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-DIP
|
-55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
-55°C ~ 150°C (TJ) | Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-DIP
|
-55°C ~ 150°C (TJ) | Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
-55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
222
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-DIP
|
-55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
-55°C ~ 150°C (TJ) | Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
-55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
-55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS POWER FET DRIVER 8DIP
|
-55°C ~ 150°C (TJ) | Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS POWER FET DRIVER 8DIP
|
-55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DUAL HS PWR FET DRIVER 8DIP
|
-55°C ~ 150°C (TJ) | Inverting,Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 20ns,15ns | 1V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
-40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
-40°C ~ 125°C (TJ) | Inverting | Low-Side | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 0.8V,2.4V | 2A,2A |