- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 498
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,795
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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Texas Instruments |
3,710
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL HS 4A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
3,616
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL 2A MOSFET DRIVER 8-DIP
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Tube | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
2,949
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HS PWR FET DRVR 8-DIP
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Tube | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Infineon Technologies |
1,963
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
3,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,958
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
2,942
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 600V 200/420MA 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
245
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 600V 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Maxim Integrated |
103
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL NONINV 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Infineon Technologies |
2,742
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Renesas Electronics America Inc. |
1,372
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR DUAL HS 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Texas Instruments |
2,990
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT POWER DRIVER 8-DIP
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Tube | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Infineon Technologies |
2,967
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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STMicroelectronics |
1,300
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR HALF BRDG HV W/OSC 8DIP
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Tube | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-Mini DIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
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Maxim Integrated |
150
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
3,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR SELF-OSC HALF BRG 8-DIP
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Tube | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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Texas Instruments |
527
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Maxim Integrated |
201
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR INV/NONINV 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Infineon Technologies |
337
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET/IGBT DVR HV HS 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA |
