Packaging:
Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 498
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXE611P1
IXYS
Enquête
-
-
MOQ: 450  MPQ: 1
IC DRIVER MOSF/IGBT HALF 8DIP
Tube - - 8-PDIP - - - - - - - - -
IXF611P1
IXYS
Enquête
-
-
MOQ: 450  MPQ: 1
IC DRIVER MOSF/IGBT HALF 8DIP
Tube - - 8-PDIP - - - - - - - - -
IXG611P1
IXYS
Enquête
-
-
MOQ: 450  MPQ: 1
IC DRIVER MOSF/IGBT 0.6A 8DIP
Tube - - 8-PDIP - - - - - - - - -
IXH611P1
IXYS
Enquête
-
-
MOQ: 450  MPQ: 1
IC DRIVER HALF BRIDGE GATE 8DIP
Tube - - 8-PDIP - - - - - - - - -
IXJ611P1
IXYS
Enquête
-
-
MOQ: 450  MPQ: 1
IC DRIVER HALF BRIDGE GATE 8DIP
Tube - - 8-PDIP - - - - - - - - -
IXK611P1
IXYS
Enquête
-
-
MOQ: 450  MPQ: 1
IC DRIVER HALF BRIDGE GATE 8DIP
Tube - - 8-PDIP - - - - - - - - -
NCP5106APG
ON Semiconductor
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRIVER HI/LO 600V 8-DIP
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-PDIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5106BPG
ON Semiconductor
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRIVER HI/LO 600V 8-DIP
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-PDIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5104PG
ON Semiconductor
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-DIP
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5111PG
ON Semiconductor
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRIVER HI/LOW SIDE HV 8DIP
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5304PG
ON Semiconductor
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRIVER HI/LOW SIDE HV 8DIP
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
TSC428EPA
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL PWR DIP
Tube 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
RT7028AGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube 10 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7028BGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube 10 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7021AGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube 13 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7021BGN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube 13 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
TC4427AVPA-VAO
Microchip Technology
Enquête
-
-
MOQ: 0  MPQ: 1
1.5A DUAL MOSFET DRVR
- 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-PDIP Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
RT7020GN
Richtek USA Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC HALF-BRIDGE GATE DRVR DIP8
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-DIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA