- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 498
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER 3.3V DUAL 8-DIP
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Tube | 3.3 V ~ 5 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | - | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC MOSFET DVR HI-SIDE TRPL 8-DIP
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Tube | 1.8 V ~ 6 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | High-Side | 3 | N-Channel MOSFET | - | - | - | - | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC MOSFET DVR HI-SIDE DUAL 8-DIP
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Tube | 9 V ~ 24 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC MOSFET DVR HI-SIDE DUAL 8-DIP
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Tube | 9 V ~ 24 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DVR HI-SIDE DUAL 8-DIP
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Tube | 9 V ~ 24 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRIVER HIGH/LOW DRIVER 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.7V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -55°C ~ 150°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER MOSFET DUAL HS 8DIP
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Tube | 6.1 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | 6.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | 6.1 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8DIP
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Tube | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC PREDRIVER IGBT IGNITION 8DIP
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Tube | 7 V ~ 10 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | - | - | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A |
