- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 498
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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3A DUAL NON-INVERTING LOW SIDE G
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- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP | CMOS/TTL | Independent | Low-Side | 2 | IGBT | - | 18ns,18ns | 0.8V,3V | 3A,3A | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DUAL MOSFET IGBT 8-DIP
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Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 660 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | 180mA,260mA | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1A HS N-INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 19ns,19ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 19ns,19ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 2A HS 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 2A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 3A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DVR .5A HS INV 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 500mA,500mA | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DVR .5A HS 8DIP
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Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 500mA,500mA | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A |