- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 498
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
294
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-DIP
|
Tube | 4.5 V ~ 30 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH VOLT 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.3V | 1.4A，2.2A | |||
|
|
Microchip Technology |
380
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
|
|
Microchip Technology |
437
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 4.5 V ~ 16 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
539
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
454
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
521
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8DIP
|
Tube | 6.1 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
Microchip Technology |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8DIP
|
Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
|
Microchip Technology |
288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LO SIDE 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
452
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
115
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | 7 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
386
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 0.8V，2.4V | 9A，9A | |||
|
|
Microchip Technology |
331
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，24ns | 0.8V，3V | 9A，9A | |||
|
|
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 0.8V，2.4V | 9A，9A | |||
|
|
Microchip Technology |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
91
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A |
