- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 498
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Microchip Technology |
Enquête
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-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSFET HI SIDE HS 8DIP
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Tube | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC DRVR HALF BRDG HV W/OSC 8DIP
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Tube | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-Mini DIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 17000 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，45ns | - | 250mA，500mA | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC MONO PIN DVR HS 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Microchip Technology |
Enquête
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-
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MOQ: 2800 MPQ: 1
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IC PWM HIGH-SIDE SWITCH 8-DIP
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Tube | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC DRVR HALF BRIDGE HV 8MINIDIP
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Tube | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-Mini DIP | Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8MINIDIP
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Tube | 17V (Max) | -40°C ~ 125°C (TJ) | 8-Mini DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC IGBT/MOSFET DRIVER ADV 8-DIP
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Tube | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC PIN DRIVER 40MHZ 3ST 8-DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSF DRVR FAST DUAL INV 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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ON Semiconductor |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRIVER GATE HALF BRIDGE 8-DIP
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Tube | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA |
