- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 498
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 150 MPQ: 1
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IC MOSFET DRIVER LOW-SIDE 8-DIP
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Tube | 12 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 150 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 250ns，250ns | 0.8V，3V | 130mA，130mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，45ns | - | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | - | 125mA，250mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRIVER DUAL LOW SIDE 8-DIP
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Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRIVER DUAL LOW SIDE 8-DIP
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Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRIVER DUAL LOW SIDE 8-DIP
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Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC DRVR HALF BRDG SELF-OSC 8-DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC HALF BRIDGE DRIVER W/DIO 8DIP
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Tube | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Texas Instruments |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 8A SGL 8-DIP
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Tube | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | 8A，8A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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MOQ: 200 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER 600V 200/420MA 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA |
