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- Voltage - Supply：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 123
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 500V 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2.5A，2.5A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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- | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 2A，2A | ||
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Infineon Technologies |
5
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3 jours |
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET/IGBT 1CH 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH SIDE SGL 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，25ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH SIDE SGL 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，25ns | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HIGH SIDE 8SO
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRVR HIGH SIDE 8SO
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
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-
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MOQ: 1500 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 16SO
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 15ns，13ns | 2.5A，2.5A | ||
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Diodes Incorporated |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 16SO
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 15ns，13ns | 2.5A，2.5A | ||
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Diodes Incorporated |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 16SO
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 15ns，13ns | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3800 MPQ: 1
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IC DRIVER MOSFET/IGBT 1CH 8-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DVR HIGH/LOW 600V 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DVR HIGH/LOW 600V 16SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DRVR 600V HI/LO 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 2A，2A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER 1CHANNEL 8SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR HI/LO SIDE 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16MLPQ
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad，14 Leads | 16-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC MOSFET IGBT DRIVER 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A |
