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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 58
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,992
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2.5A，2.5A | ||
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|
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Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
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|
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Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 2A，2.5A | ||
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|
|
Infineon Technologies |
1,697
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
- | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
2,399
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SIDE DRIVER SGL 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,312
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
1,538
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 3A，3A | ||
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|
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Infineon Technologies |
1,434
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,189
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 3A，3A | ||
|
|
|
Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
1,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,219
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1CHAN 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA |
