- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
1,697
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
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Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | - | IGBT，N-Channel，P-Channel MOSFET | 25ns，15ns | 2A，3A | ||
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|
|
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Cut Tape (CT) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | - | IGBT，N-Channel，P-Channel MOSFET | 25ns，15ns | 2A，3A | ||
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|
|
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | - | IGBT，N-Channel，P-Channel MOSFET | 25ns，15ns | 2A，3A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Cut Tape (CT) | 12 V ~ 20 V | 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
- | 12 V ~ 20 V | 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 9.4ns，9.7ns | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
Cut Tape (CT) | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 9.4ns，9.7ns | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 9.4ns，9.7ns | 2A，2A | ||
|
|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
Tube | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 9.4ns，9.7ns | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 90 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tube | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A |
