- Voltage - Supply：
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- Operating Temperature：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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|
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Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
1,697
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
12 V ~ 20 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
1,434
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,189
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 3A，3A | ||
|
|
|
Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 500V 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2.5A，2.5A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR 600V HI/LO 14DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 175 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
12 V ~ 20 V | -55°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 2A，2.5A |
