Fabricant:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 113
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IR2110STRPBF
Infineon Technologies
22,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tape & Reel (TR) 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 2A,2A
IR2110STRPBF
Infineon Technologies
22,868
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Cut Tape (CT) 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 2A,2A
IR2110STRPBF
Infineon Technologies
22,868
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
- 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 2A,2A
IR2010STRPBF
Infineon Technologies
5,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 10ns,15ns 3A,3A
IR2010STRPBF
Infineon Technologies
5,148
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 10ns,15ns 3A,3A
IR2010STRPBF
Infineon Technologies
5,148
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 10ns,15ns 3A,3A
IR2113STRPBF
Infineon Technologies
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tape & Reel (TR) 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 2A,2A
IR2113STRPBF
Infineon Technologies
7,166
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Cut Tape (CT) 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 2A,2A
IR2113STRPBF
Infineon Technologies
7,166
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
- 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 2A,2A
IRS2110SPBF
Infineon Technologies
8,992
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 2.5A,2.5A
IR2110PBF
Infineon Technologies
8,446
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14DIP
Tube 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 2A,2A
IR2110SPBF
Infineon Technologies
8,823
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 2A,2A
IR2213SPBF
Infineon Technologies
1,784
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube 12 V ~ 20 V -55°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 25ns,17ns 2A,2.5A
IR2213PBF
Infineon Technologies
1,697
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube 12 V ~ 20 V -55°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 25ns,17ns 2A,2.5A
IRS2113STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 2.5A,2.5A
IRS2113STRPBF
Infineon Technologies
2,133
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 2.5A,2.5A
IRS2113STRPBF
Infineon Technologies
2,133
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 2.5A,2.5A
IR2112STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR2112STRPBF
Infineon Technologies
2,308
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR2112STRPBF
Infineon Technologies
2,308
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA