- Packaging：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 33
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Infineon Technologies |
22,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
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Tape & Reel (TR) | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | ||
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|
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Infineon Technologies |
22,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Cut Tape (CT) | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | ||
|
|
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Infineon Technologies |
22,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | ||
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Infineon Technologies |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | ||
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|
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Infineon Technologies |
7,166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | ||
|
|
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Infineon Technologies |
7,166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | ||
|
|
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Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | ||
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|
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Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | ||
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|
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Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
Tube | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | ||
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|
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Infineon Technologies |
1,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | ||
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|
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | 15 V ~ 20 V | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | 15 V ~ 20 V | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
- | 15 V ~ 20 V | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HIGH/LOW 600V 16SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HIGH/LOW 600V 16SOIC
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Tube | 10 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR 600V HI/LO 14DIP
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Tube | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
|
Tube | 15 V ~ 20 V | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 180 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 175 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
Tube | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | IGBT，N-Channel MOSFET | 600V | 25ns，17ns |
