- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 123
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
1,217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER SGL CHAN 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 2.5A,2.5A | ||||
Infineon Technologies |
914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 2.5A,2.5A | ||||
Infineon Technologies |
914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 2.5A,2.5A | ||||
Infineon Technologies |
498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1CHAN 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 250mA,500mA | ||||
Infineon Technologies |
141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 16SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 2.5A,2.5A | ||||
Infineon Technologies |
206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 16-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,13ns | 2.5A,2.5A | ||||
Diodes Incorporated |
891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,13ns | 2.5A,2.5A | ||||
Diodes Incorporated |
891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,13ns | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 1200V | 25ns,15ns | 2A,3A | ||||
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 1200V | 25ns,15ns | 2A,3A | ||||
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 1200V | 25ns,15ns | 2A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 2.5A,2.5A | ||||
Infineon Technologies |
780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 2.5A,2.5A | ||||
Infineon Technologies |
780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 2.5A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 2A,2.5A | ||||
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 2A,2.5A | ||||
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
- | - | 12 V ~ 20 V | 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 2A,2.5A | ||||
Infineon Technologies |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 290mA,600mA |