Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Memory Size：

Memory Type：

Technology：

Memory Format：

Access Time：

Memory Interface：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Access Time	Memory Interface	Write Cycle Time - Word, Page
	W9825G6KH-6I TR	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	5ns	Parallel	-
	AS4C16M16MD1-6BCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 60FPBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 60FPBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TJ)	60-TFBGA	60-FPBGA (8x9)	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	-	Parallel	15ns
	IS43R16800E-6TLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP II	Tape & Reel (TR)	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	Parallel	12ns
	AS4C2M32SA-6TCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1000 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	64Mb (2M x 32)	Volatile	SDRAM	DRAM	5.5ns	Parallel	2ns
	W947D6HBHX6E TR	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	60-TFBGA	60-VFBGA (8x9)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	5ns	Parallel	15ns
	W987D6HBGX6E TR	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	54-TFBGA	54-VFBGA (8x9)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPSDR	DRAM	5.4ns	Parallel	15ns
	W987D6HBGX6I TR	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	54-TFBGA	54-VFBGA (8x9)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPSDR	DRAM	5.4ns	Parallel	15ns
	AS4C4M16S-6TIN	Alliance Memory，Inc.	2	3 jours	-	IC DRAM 64M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	64Mb (4M x 16)	Volatile	SDRAM	DRAM	5.4ns	Parallel	2ns
	W9816G6JB-6I	Winbond Electronics	Enquête	-	-	IC DRAM 16M PARALLEL 60VFBGA MOQ: 286 MPQ: 1	IC DRAM 16M PARALLEL 60VFBGA	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	60-TFBGA	60-VFBGA (6.4x10.10)	Surface Mount	16Mb (1M x 16)	Volatile	SDRAM	DRAM	5ns	Parallel	-
	W947D2HBJX6E TR	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	90-TFBGA	90-VFBGA (8x13)	Surface Mount	128Mb (4M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	5ns	Parallel	15ns
	W987D2HBJX6E TR	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	90-TFBGA	90-VFBGA (8x13)	Surface Mount	128Mb (4M x 32)	Volatile	SDRAM - Mobile LPSDR	DRAM	5.4ns	Parallel	15ns
	W987D2HBJX6I TR	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	90-TFBGA	90-VFBGA (8x13)	Surface Mount	128Mb (4M x 32)	Volatile	SDRAM - Mobile LPSDR	DRAM	5.4ns	Parallel	15ns
	IS43R16160F-6TL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tape & Reel (TR)	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	Parallel	15ns
	IS42S16800F-6TLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1500 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM	DRAM	5.4ns	Parallel	-
	IS42S32200L-6TL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1500 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	64Mb (2M x 32)	Volatile	SDRAM	DRAM	5.4ns	Parallel	-
	IS42S16800F-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 54TFBGA MOQ: 2500 MPQ: 1	IC DRAM 128M PARALLEL 54TFBGA	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TFBGA	54-TFBGA (8x8)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM	DRAM	5.4ns	Parallel	-
	W947D6HBHX6E	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 312 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	60-TFBGA	60-VFBGA (8x9)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	5ns	Parallel	15ns
	W987D6HBGX6E	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 312 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	Tray	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	54-TFBGA	54-VFBGA (8x9)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPSDR	DRAM	5.4ns	Parallel	15ns
	W987D6HBGX6I	Winbond Electronics	Enquête	-	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 312 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	54-TFBGA	54-VFBGA (8x9)	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - Mobile LPSDR	DRAM	5.4ns	Parallel	15ns
	IS43R16800E-6TLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP II MOQ: 432 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP II	Tray	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	Parallel	12ns

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