Fabricant:
Write Cycle Time - Word, Page:
Découvrez les produits 29
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Access Time Write Cycle Time - Word, Page
AS4C1M16S-6TIN
Alliance Memory,Inc.
362
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray -40°C ~ 85°C (TA) 5.4ns 2ns
W9816G6JH-6
Winbond Electronics
216
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray 0°C ~ 70°C (TA) 5ns -
AS4C1M16S-6TCN
Alliance Memory,Inc.
28
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray 0°C ~ 70°C (TA) 5.4ns 2ns
W9816G6JH-6 TR
Winbond Electronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 5ns -
IS42S16100H-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 5.5ns -
IS42S16100H-6TL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1053  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray 0°C ~ 70°C (TA) 5.5ns -
W9816G6JH-6I TR
Winbond Electronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 5ns -
W9816G6JH-6I
Winbond Electronics
Enquête
-
-
MOQ: 117  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray -40°C ~ 85°C (TA) 5ns -
IS42S16100H-6TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 5.5ns -
IS42S16100H-6TLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 936  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray -40°C ~ 85°C (TA) 5.5ns -
AS4C1M16S-6TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 5.4ns 2ns
AS4C1M16S-6TINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 5.4ns 2ns
IS42S16100C1-6T
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 351  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray 0°C ~ 70°C (TA) 5.5ns -
IS42S16100C1-6T-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 5.5ns -
IS42S16100C1-6TL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 468  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray 0°C ~ 70°C (TA) 5.5ns -
IS42S16100C1-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 5.5ns -
IS42S16100E-6TL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 936  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray 0°C ~ 70°C (TA) 5.5ns -
IS42S16100E-6TLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 936  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray -40°C ~ 85°C (TA) 5.5ns -
IS42S16100E-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 5.5ns -
IS42S16100E-6TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 5.5ns -