Découvrez les produits 9
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Memory Type Technology Memory Format Access Time Memory Interface Write Cycle Time - Word, Page
MX25L51245GMI-08G
Macronix
Enquête
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MOQ: 1  MPQ: 1
SERIAL NOR
MXSMIO 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOP 512Mb (64M x 8) Non-Volatile FLASH - NOR Flash - SPI 60μs,750μs
MX25U51245GMI00
Macronix
Enquête
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MOQ: 1  MPQ: 1
IC FLASH 512M SPI 166MHZ
MX25xxx45 - MXSMIO 1.65 V ~ 2 V -40°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOP 512Mb (64M x 8) Non-Volatile FLASH - NOR Flash - SPI - Quad I/O,QPI,DTR 60μs,750μs
W9812G6KH-6I
Winbond Electronics
Enquête
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MOQ: 108  MPQ: 1
IC DRAM 128M PARALLEL 54TSOP
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II 128Mb (8M x 16) Volatile SDRAM DRAM 5ns Parallel -
MX25L51245GMI-10G
Macronix
Enquête
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MOQ: 4840  MPQ: 1
SERIAL NOR
MXSMIO 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOP 512Mb (64M x 8) Non-Volatile FLASH - NOR Flash - SPI 60μs,750μs
MX25L51245GML-10G
Macronix
Enquête
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MOQ: 4840  MPQ: 1
IC FLASH 512KBIT
MXSMIO 2.7 V ~ 3.6 V - 16-SOIC (0.295",7.50mm Width) 16-SOP 512Mb (64M x 8) Non-Volatile FLASH - NOR Flash - SPI 60μs,750μs
IS43R16320E-6TLI
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 216  MPQ: 1
IC DRAM 512M PARALLEL 166MHZ
- 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) 66-TSSOP (0.400",10.16mm Width) 66-TSOP II 512Mb (32M x 16) Volatile SDRAM - DDR DRAM 700ps Parallel 15ns
MT46H32M16LFBF-6 AT:C
Micron Technology Inc.
Enquête
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MOQ: 1782  MPQ: 1
IC DRAM 512M PARALLEL 60VFBGA
- 1.7 V ~ 1.95 V -40°C ~ 105°C (TA) 60-VFBGA 60-VFBGA (8x9) 512Mb (32M x 16) Volatile SDRAM - Mobile LPDDR DRAM 5.0ns Parallel 15ns
IS42S16160J-6TI
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 0  MPQ: 1
IC DRAM 256M PARALLEL 166MHZ
- 3 V ~ 3.6 V -40°C ~ 85°C 54-TSOP (0.400",10.16mm Width) 54-TSOP II 256Mb (16M x 16) Volatile SDRAM DRAM 5.4ns Parallel -
71V25761S166PFGI
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 144  MPQ: 1
IC SRAM 4.5M PARALLEL 100TQFP
- 3.135 V ~ 3.465 V -40°C ~ 85°C (TA) 100-LQFP 100-TQFP 4.5Mb (128K x 36) Volatile SRAM - Synchronous SRAM 3.5ns Parallel -