Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Package / Case：

Supplier Device Package：

Mounting Type：

Memory Size：

Memory Type：

Technology：

Memory Format：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Access Time	Write Cycle Time - Word, Page
	W9812G6KH-6	Winbond Electronics	3,538	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM	DRAM	5ns	-
	W9825G6KH-6	Winbond Electronics	1,420	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	5ns	-
	AS4C8M16SA-6TCN	Alliance Memory，Inc.	354	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM	DRAM	5ns	12ns
	AS4C16M16SA-6TCN	Alliance Memory，Inc.	436	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	5ns	12ns
	IS43R16160D-6TL	ISSI，Integrated Silicon Solution Inc	1,404	3 jours	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	2.3 V ~ 2.7 V	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	15ns
	IS43R16160F-6TL	ISSI，Integrated Silicon Solution Inc	666	3 jours	-	IC DRAM 256M PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 66TSOP II	Tray	-	2.3 V ~ 2.7 V	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	15ns
	HYB25D512800CE-6	Qimonda	1,500	3 jours	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1500 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tape & Reel (TR)	-	2.3 V ~ 2.7 V	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	512Mb (64M x 8)	Volatile	SDRAM - DDR	DRAM	-	-
	HYB25D512800CE-6	Qimonda	237	3 jours	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Cut Tape (CT)	-	2.3 V ~ 2.7 V	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	512Mb (64M x 8)	Volatile	SDRAM - DDR	DRAM	-	-
	W9864G6KH-6	Winbond Electronics	782	3 jours	-	IC DRAM 64M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	64Mb (4M x 16)	Volatile	SDRAM	DRAM	5ns	-
	IS42S16400J-6TL	ISSI，Integrated Silicon Solution Inc	324	3 jours	-	IC DRAM 64M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	64Mb (4M x 16)	Volatile	SDRAM	DRAM	5.4ns	-
	AS4C4M16SA-6TCN	Alliance Memory，Inc.	105	3 jours	-	IC DRAM 64M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	64Mb (4M x 16)	Volatile	SDRAM	DRAM	5.4ns	2ns
	IS43LR32640A-6BL	ISSI，Integrated Silicon Solution Inc	50	3 jours	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tray	-	1.7 V ~ 1.95 V	90-LFBGA	90-WBGA (8x13)	Surface Mount	2Gb (64M x 32)	Volatile	SDRAM - DDR	DRAM	5ns	15ns
	W9816G6JH-6	Winbond Electronics	216	3 jours	-	IC DRAM 16M PARALLEL 50TSOP II MOQ: 1 MPQ: 1	IC DRAM 16M PARALLEL 50TSOP II	Tray	-	3 V ~ 3.6 V	50-TSOP (0.400"，10.16mm Width)	50-TSOP II	Surface Mount	16Mb (1M x 16)	Volatile	SDRAM	DRAM	5ns	-
	AS4C1M16S-6TCN	Alliance Memory，Inc.	28	3 jours	-	IC DRAM 16M PARALLEL 50TSOP II MOQ: 1 MPQ: 1	IC DRAM 16M PARALLEL 50TSOP II	Tray	-	3 V ~ 3.6 V	50-TSOP (0.400"，10.16mm Width)	50-TSOP II	Surface Mount	16Mb (1M x 16)	Volatile	SDRAM	DRAM	5.4ns	2ns
	AS4C2M32SA-6TCN	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	64Mb (2M x 32)	Volatile	SDRAM	DRAM	5.5ns	2ns
	AS4C64M16D1-6TCN	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 66TSOP II	Bulk	-	2.3 V ~ 2.7 V	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	1Gb (64M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	15ns
	IS42S32800J-6TL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	256Mb (8M x 32)	Volatile	SDRAM	DRAM	5.4ns	-
	AS4C4M32SA-6TCN	Alliance Memory，Inc.	5	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	128Mb (4M x 32)	Volatile	SDRAM	DRAM	5.4ns	2ns
	IS43R16160D-6BL	ISSI，Integrated Silicon Solution Inc	9	3 jours	-	IC DRAM 256M PARALLEL 60TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 60TFBGA	Tray	-	2.3 V ~ 2.7 V	60-TFBGA	60-TFBGA (8x13)	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	15ns
	AS4C64M16D1A-6TCN	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 66TSOP II	Bulk	-	2.3 V ~ 2.7 V	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	1Gb (64M x 16)	Volatile	SDRAM - DDR	DRAM	700ps	15ns

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