Découvrez les produits 116
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Memory Size Technology Access Time Write Cycle Time - Word, Page
AS4C16M16SA-6BIN
Alliance Memory,Inc.
4,009
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TFBGA
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 256Mb (16M x 16) SDRAM 5ns 12ns
AS4C16M16SA-6BAN
Alliance Memory,Inc.
1,020
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TFBGA
Tray Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 256Mb (16M x 16) SDRAM 5ns 12ns
AS4C4M16SA-6BIN
Alliance Memory,Inc.
171
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (4M x 16) SDRAM 5.4ns 2ns
AS4C4M16SA-6BAN
Alliance Memory,Inc.
1,904
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tray Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 64Mb (4M x 16) SDRAM 5.4ns 2ns
AS4C8M16SA-6BIN
Alliance Memory,Inc.
436
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 54TFBGA
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 128Mb (8M x 16) SDRAM 5ns 12ns
AS4C8M16SA-6BAN
Alliance Memory,Inc.
9
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 54TFBGA
Tray Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 128Mb (8M x 16) SDRAM 5ns 12ns
IS42S16400J-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (4M x 16) SDRAM 5.4ns -
IS42S16400J-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 696  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 64Mb (4M x 16) SDRAM 5.4ns -
IS42S16400J-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (4M x 16) SDRAM 5.4ns -
AS4C4M16SA-6BINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (4M x 16) SDRAM 5.4ns 2ns
IS42S16400J-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 696  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 64Mb (4M x 16) SDRAM 5.4ns -
IS42S16800F-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (8M x 16) SDRAM 5.4ns -
AS4C4M16SA-6BANTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 64M PARALLEL 54TFBGA
Tape & Reel (TR) Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 64Mb (4M x 16) SDRAM 5.4ns 2ns
IS42SM16200D-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 32Mb (2M x 16) SDRAM - Mobile 5.5ns -
IS42RM16200D-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
Tape & Reel (TR) - 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) 32Mb (2M x 16) SDRAM - Mobile 6ns -
IS42S16800F-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 348  MPQ: 1
IC DRAM 128M PARALLEL 54TFBGA
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (8M x 16) SDRAM 5.4ns -
IS42SM16200D-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 348  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 32Mb (2M x 16) SDRAM - Mobile 5.5ns -
IS42SM32100D-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 32Mb (1M x 32) SDRAM - Mobile 5.5ns -
W9812G6JB-6 TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 128Mb (8M x 16) SDRAM 5ns -
IS42S16800F-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 54TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 128Mb (8M x 16) SDRAM 5.4ns -