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Découvrez les produits 1,718
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Access Time Memory Interface Write Cycle Time - Word, Page
MX25L51245GZ2I-08G
Macronix
Enquête
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MOQ: 1  MPQ: 1
SERIAL NOR
Tray MXSMIO 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-WSON (8x6) Surface Mount 512Mb (64M x 8) Non-Volatile FLASH - NOR Flash - SPI 60μs,750μs
W9816G6JH-6 TR
Winbond Electronics
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5ns Parallel -
IS42S16100H-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
IS42S16100H-6TL
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 1053  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
W9816G6JH-6I TR
Winbond Electronics
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5ns Parallel -
W9816G6JH-6I
Winbond Electronics
Enquête
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MOQ: 117  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5ns Parallel -
W9864G6KH-6 TR
Winbond Electronics
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 64M PARALLEL 54TSOP
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 64Mb (4M x 16) Volatile SDRAM DRAM 5ns Parallel -
IS42S16100H-6TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
IS42S16100H-6TLI
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 936  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
IS42S16100H-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 3000  MPQ: 1
IC DRAM 16M PARALLEL 60TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 60-TFBGA 60-TFBGA (6.4x10.1) Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
W9864G6KH-6I TR
Winbond Electronics
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 64M PARALLEL 54TSOP
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 64Mb (4M x 16) Volatile SDRAM DRAM 5ns Parallel -
W9864G6KH-6I
Winbond Electronics
Enquête
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MOQ: 108  MPQ: 1
IC DRAM 64M PARALLEL 54TSOP
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 64Mb (4M x 16) Volatile SDRAM DRAM 5ns Parallel -
IS42S16100H-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 3000  MPQ: 1
IC DRAM 16M PARALLEL 60TFBGA
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 60-TFBGA 60-TFBGA (6.4x10.1) Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
IS42S16100H-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 702  MPQ: 1
IC DRAM 16M PARALLEL 60TFBGA
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 60-TFBGA 60-TFBGA (6.4x10.1) Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
W9812G6KH-6 TR
Winbond Electronics
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 54TSOP
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 128Mb (8M x 16) Volatile SDRAM DRAM 5ns Parallel -
IS42S16400J-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 54TSOP
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 64Mb (4M x 16) Volatile SDRAM DRAM 5.4ns Parallel -
IS42S16100H-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 702  MPQ: 1
IC DRAM 16M PARALLEL 60TFBGA
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 60-TFBGA 60-TFBGA (6.4x10.1) Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.5ns Parallel -
AS4C1M16S-6TCNTR
Alliance Memory,Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.4ns Parallel 2ns
IS42S16400J-6TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
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MOQ: 1500  MPQ: 1
IC DRAM 64M PARALLEL 54TSOP
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 64Mb (4M x 16) Volatile SDRAM DRAM 5.4ns Parallel -
AS4C1M16S-6TINTR
Alliance Memory,Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II Surface Mount 16Mb (1M x 16) Volatile SDRAM DRAM 5.4ns Parallel 2ns