Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 302
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXDN409SIA
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDN409YI
IXYS
Enquête
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MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO263-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDI409SIA
IXYS
Enquête
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MOQ: 94  MPQ: 1
IC MOSFET DVR 9A INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
ISL2100AABZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.4V 2A,2A
ISL2100AABZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.4V 2A,2A
PX3516ADDGR4XTMA1
Infineon Technologies
Enquête
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MOQ: 4000  MPQ: 1
IC BUCK SYNC DRIVER DL TDSON10-2
Tape & Reel (TR) - 4.5 V ~ 6 V -25°C ~ 150°C (TJ) 10-VFDFN Exposed Pad TDSON-10-2 Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 30V 1.3V,1.9V 2A,2A
HIP2120FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2120FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2120FRTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2120FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2121FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A
HIP2121FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A
HIP2121FRTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A
HIP2121FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A
HIP2122FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2122FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2122FRTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 3.7V,7.93V 2A,2A
HIP2122FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A
HIP2123FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A
HIP2123FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - 8 V ~ 14 V -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 1.4V,2.2V 2A,2A