- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
1,614
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
1,263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 60V/2.5A HF 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 720 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 720 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，3.5V | 9A，9A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，3.5V | 9A，9A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，3.5V | 9A，9A | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO220-5
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，3.5V | 9A，9A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO220-5
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，3.5V | 9A，9A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO220-5
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，3.5V | 9A，9A |
