- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 91
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
1,614
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
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Maxim Integrated |
2,132
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR FET P-P 8-UMAX
|
- | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 3A，3A | ||
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Texas Instruments |
2,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | - | - | ||
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|
|
Renesas Electronics America Inc. |
2,362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
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|
|
Renesas Electronics America Inc. |
1,263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
1,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V，7V | 2A，2A | ||
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|
Renesas Electronics America Inc. |
1,186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V，2.5V | 2.6A，2.4A | ||
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|
|
Renesas Electronics America Inc. |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
1,649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V，2.2V | 2A，2A | ||
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|
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Maxim Integrated |
180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 14-TSSOP
|
- | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-TSSOP-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 3A，3A | ||
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|
|
Renesas Electronics America Inc. |
2,336
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V，2.2V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
965
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Automotive，AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 1.8V，4V | 2A，2A | ||
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|
|
Texas Instruments |
260
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DGTL CTRL MOSFET DVR 14HTSSOP
|
- | 4.25 V ~ 15 V | -40°C ~ 105°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 1.16V，2.08V | 4A，4A | ||
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|
|
Renesas Electronics America Inc. |
1,827
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG HF 100V 2A 9DFN
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8EPSOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V，7V | 2A，2A | ||
|
|
|
Texas Instruments |
101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DGTL CTRL COMPAT DVR 14HTSSOP
|
- | 4.25 V ~ 15 V | -40°C ~ 105°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 1.16V，2.08V | 4A，4A | ||
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|
|
Renesas Electronics America Inc. |
374
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRVR 60V/2.5A HF 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 1V，2.5V | 2.6A，2.4A | ||
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|
|
Renesas Electronics America Inc. |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 60V/2.5A HF 20DIP
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A |
