Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 111
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TPS28225DRBR
Texas Instruments
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
- 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V - 2A,2A
ADP3624ARDZ-RL
Analog Devices Inc.
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR DUAL NONINVERT 4A 8SOIC
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2V 4A,4A
HIP2101IBZT
Renesas Electronics America Inc.
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8-SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP2100IBZT
Renesas Electronics America Inc.
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8-SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 4V,7V 2A,2A
HIP2101EIBZT
Renesas Electronics America Inc.
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8EPSOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP4081AIBZT
Renesas Electronics America Inc.
9,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER FET FULL 80V 20-SOIC
- 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 1V,2.5V 2.6A,2.4A
HIP4080AIBZT
Renesas Electronics America Inc.
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER FET FULL 80V 20-SOIC
- 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 95V 1V,2.5V 2.6A,2.4A
TPS28225DR
Texas Instruments
22,500
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNC MOSFET DVR 4A 8-SOIC
- 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V - -
UCD7100PWPR
Texas Instruments
2,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DGTL CTRL MOSFET DVR 14HTSSOP
- 4.25 V ~ 15 V -40°C ~ 105°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-HTSSOP Non-Inverting Single Low-Side 1 N-Channel MOSFET - 1.16V,2.08V 4A,4A
ADP3629ARZ-R7
Analog Devices Inc.
22,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR 2A DL HS 8SOIC
- 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2V 2A,2A
TPS28225DRBT
Texas Instruments
3,000
3 jours
-
MOQ: 250  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
- 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V - -
ADP3623ARHZ-RL
Analog Devices Inc.
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 4A DL HS 8MSOP
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2V 4A,4A
EL7242CSZ-T7
Renesas Electronics America Inc.
6,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER DUAL HS 8-SOIC
- 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
ADP3623ARDZ-RL
Analog Devices Inc.
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2V 4A,4A
HIP2101IBZT7A
Renesas Electronics America Inc.
250
3 jours
-
MOQ: 250  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
ADP3635ARHZ-RL
Analog Devices Inc.
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 4A DL HS 8MSOP
- 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2V 4A,4A
UCD7201PWPR
Texas Instruments
2,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DGTL CTRL COMPAT DVR 14HTSSOP
- 4.25 V ~ 15 V -40°C ~ 105°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-HTSSOP Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 1.16V,2.08V 4A,4A
ISL78420AVEZ-T7A
Renesas Electronics America Inc.
250
3 jours
-
MOQ: 250  MPQ: 1
IC DRVR HALF BRIDGE 10DFN
Automotive,AEC-Q100 8 V ~ 14 V -55°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-HTSSOP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 1.8V,4V 2A,2A
MAX5075AAUA+T
Maxim Integrated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRVR FET P-P 8-UMAX
- 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP RC Input Circuit Synchronous Low-Side 2 N-Channel MOSFET - - 3A,3A
TPS28226DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC SINK SYNC MOSFET DVR 4A 8SOIC
- 6.8 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V - -