- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 49
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | - | 2A,2A | ||||
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
11,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
9,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V,2.5V | 2.6A,2.4A | ||||
Texas Instruments |
24,234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | - | - | ||||
Texas Instruments |
3,554
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR/CTLR DGTL 14HTSSOP
|
- | 4.25 V ~ 15 V | -40°C ~ 105°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 1.16V,2.08V | 4A,4A | ||||
Analog Devices Inc. |
22,877
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8SOIC
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | 2A,2A | ||||
Texas Instruments |
6,729
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | - | - | ||||
Analog Devices Inc. |
4,462
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
8,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 2A,2A | ||||
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Analog Devices Inc. |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2V | 4A,4A | ||||
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DGTL CTRL COMPAT DVR 14HTSSOP
|
- | 4.25 V ~ 15 V | -40°C ~ 105°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 1.16V,2.08V | 4A,4A | ||||
Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Automotive,AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 1.8V,4V | 2A,2A | ||||
Texas Instruments |
1,884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINK SYNC MOSFET DVR 4A 8SOIC
|
- | 6.8 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | - | - | ||||
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Automotive,AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 0.8V,2.1V | 2A,2A |