- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 302
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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IC DRIVER HALF BRIDGE 100V 12DFN
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
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Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRDG 100V/2A 16-QFN
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DRVR HALF BRDG 100V 8EP-SOIC
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Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR HALF BRDG 100V 8EP-SOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 12-DFN
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Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 12-DFN
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 16-QFN
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE FET 20SOIC
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Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER FULL BRIDGE FET 20SOIC
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Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 1V,2.5V | 2.6A,2.4A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC DRVR FET P-P 14-TSSOP
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-TSSOP-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 3A,3A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR LS 9A 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A | ||||
Maxim Integrated |
Enquête
|
- |
-
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MOQ: 10000 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 3A,3A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE TO263-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 94 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,3.5V | 9A,9A |