Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 302
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
HIP2100IR4T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 4V,7V 2A,2A
HIP2100IR4Z
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tube - 9 V ~ 14 V -55°C ~ 150°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 4V,7V 2A,2A
HIP2100IR4ZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 4V,7V 2A,2A
HIP2100IRT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRDG 100V/2A 16-QFN
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-VQFN Exposed Pad 16-QFN-EP (5x5) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 4V,7V 2A,2A
HIP2101EIB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRVR HALF BRDG 100V 8EP-SOIC
Tube - 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP2101EIBT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG 100V 8EP-SOIC
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP2101IR4
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 100V 12-DFN
Tube - 9 V ~ 14 V -55°C ~ 150°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP2101IR4T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 12-DFN
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP2101IRT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 16-QFN
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-VQFN Exposed Pad 16-QFN-EP (5x5) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 0.8V,2.2V 2A,2A
HIP4080AIBT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE FET 20SOIC
Tape & Reel (TR) - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 95V 1V,2.5V 2.6A,2.4A
HIP4081AIBT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE FET 20SOIC
Tape & Reel (TR) - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Surface Mount Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 1V,2.5V 2.6A,2.4A
MAX5077AUD+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRVR FET P-P 14-TSSOP
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-TSSOP-EP Surface Mount RC Input Circuit Synchronous Low-Side 2 N-Channel MOSFET - - 3A,3A
IXDI409SI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR LS 9A 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
MAX5075AAUA
Maxim Integrated
Enquête
-
-
MOQ: 10000  MPQ: 1
IC DRVR FET P-P 8-UMAX
Tube - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount RC Input Circuit Synchronous Low-Side 2 N-Channel MOSFET - - 3A,3A
IXDD409PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDD409SI
IXYS
Enquête
-
-
MOQ: 94  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDI409PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDI409YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE TO263-5
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDN409PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-DIP
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A
IXDN409SI
IXYS
Enquête
-
-
MOQ: 94  MPQ: 1
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 9A,9A