- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 616
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
PWR MGMT MOSFET/PWR DRIVER
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Renesas Electronics America Inc. |
10,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8DFN
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
STMicroelectronics |
1,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
PWR MGMT MOSFET/PWR DRIVER
|
Tube | - | - | - | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | - | - | - | - | - | - | - | - | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Texas Instruments |
2,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER- 0.5A/1A PEAK C
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 35ns,16ns | 1.2V,2V | 500mA,1A | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | 0.8V,2V | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Cut Tape (CT) | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | 0.8V,2V | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
- | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | 0.8V,2V | - | ||||
Power Integrations |
249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DGTL ISOLATION 8A 1700V ESOP
|
Tube | - | - | - | 16-PowerSOIC (0.350",8.89mm Width),15 Leads | eSOP-R16B | Surface Mount | - | - | - | - | - | - | - | - | ||||
Power Integrations |
39
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | Independent | Half-Bridge | 2 | IGBT | 600V | 5ns,10ns | - | 8A,15A | ||||
Power Integrations |
30
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | Independent | Half-Bridge | 2 | IGBT | 600V | 5ns,10ns | - | 8A,15A | ||||
Power Integrations |
48
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | Independent | Half-Bridge | 2 | IGBT | 1200V | 5ns,10ns | - | 8A,15A | ||||
Power Integrations |
48
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | Independent | Half-Bridge | 2 | IGBT | 1700V | 5ns,10ns | - | 8A,15A | ||||
Power Integrations |
31
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | Independent | Half-Bridge | 2 | IGBT | 1700V | 5ns,10ns | - | 8A,15A |