- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 58
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
2,543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL 5A NEG VOUT 8SOIC
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Texas Instruments |
2,543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL 5A NEG VOUT 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Texas Instruments |
2,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER- 0.5A/1A PEAK C
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 35ns，16ns | 1.2V，2V | 500mA，1A | ||
|
|
|
Texas Instruments |
2,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8SOIC
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Texas Instruments |
2,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 5A 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
700V GATE DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
- | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
620-V，1.8-A，2.8-A HIGH-SIDE LO
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27710DR
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 35ns，16ns | 1.2V，2V | 500mA，1A |
