- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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|
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Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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|
|
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Texas Instruments |
2,069
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
700V GATE DRIVER- 0.5A/1A PEAK C
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 35ns，16ns | 1.2V，2V | 500mA，1A | ||
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|
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Power Integrations |
39
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
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Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Independent | Half-Bridge | IGBT | 5ns，10ns | - | 8A，15A | ||
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|
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Power Integrations |
30
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Independent | Half-Bridge | IGBT | 5ns，10ns | - | 8A，15A | ||
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|
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Power Integrations |
20
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | Independent | Half-Bridge | IGBT | 5ns，10ns | - | 8A，15A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
UCC27710DR
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 35ns，16ns | 1.2V，2V | 500mA，1A | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Synchronous | Half-Bridge | N-Channel MOSFET | - | - | - | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRVR HALF BRIDGE 16SOIC
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Tube | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Synchronous | Half-Bridge | N-Channel MOSFET | - | - | - |
