Découvrez les produits 13
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2102STRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2102STRPBF
Infineon Technologies
4,309
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Cut Tape (CT) - -40°C ~ 150°C (TJ) Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2102STRPBF
Infineon Technologies
4,309
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
- - -40°C ~ 150°C (TJ) Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
UCC27710D
Texas Instruments
2,069
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER- 0.5A/1A PEAK C
Tube - -40°C ~ 125°C (TA) Independent High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 600V 35ns,16ns 1.2V,2V 500mA,1A
UCC27712DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
700V GATE DRIVER
Tape & Reel (TR) - -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712DR
Texas Instruments
3,084
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Cut Tape (CT) - -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712DR
Texas Instruments
3,084
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
- - -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
UCC27712QDRQ1
Tape & Reel (TR) Automotive,AEC-Q100 -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3 jours
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
Cut Tape (CT) Automotive,AEC-Q100 -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3 jours
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
- Automotive,AEC-Q100 -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDQ1
Texas Instruments
963
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Tube Automotive,AEC-Q100 -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712D
Texas Instruments
903
3 jours
-
MOQ: 1  MPQ: 1
620-V,1.8-A,2.8-A HIGH-SIDE LO
Tube - -40°C ~ 125°C (TA) Synchronous High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27710DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
UCC27710DR
Tape & Reel (TR) - -40°C ~ 125°C (TA) Independent High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 600V 35ns,16ns 1.2V,2V 500mA,1A