- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 8
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | Half-Bridge | 2 | N-Channel MOSFET | 600V | - | - | - | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC GATE DRVR HALF BRIDGE 16SOIC
|
Tube | - | 10 V ~ 12 V | -40°C ~ 150°C (TJ) | Half-Bridge | 2 | N-Channel MOSFET | 600V | - | - | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Tape & Reel (TR) | - | 20V | -40°C ~ 150°C (TJ) | High-Side or Low-Side | - | IGBT | - | 18ns,19ns | - | 7.8A,6.8A | ||||
ON Semiconductor |
2,483
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Cut Tape (CT) | - | 20V | -40°C ~ 150°C (TJ) | High-Side or Low-Side | - | IGBT | - | 18ns,19ns | - | 7.8A,6.8A | ||||
ON Semiconductor |
2,483
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
- | - | 20V | -40°C ~ 150°C (TJ) | High-Side or Low-Side | - | IGBT | - | 18ns,19ns | - | 7.8A,6.8A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IGBT GATE DRIVER
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 20V | -40°C ~ 125°C (TA) | High-Side or Low-Side | - | IGBT | - | 9.2ns,7.9ns | 0.75V,4.3V | 7.8A,6.8A | ||||
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
Cut Tape (CT) | Automotive,AEC-Q100 | 20V | -40°C ~ 125°C (TA) | High-Side or Low-Side | - | IGBT | - | 9.2ns,7.9ns | 0.75V,4.3V | 7.8A,6.8A | ||||
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
- | Automotive,AEC-Q100 | 20V | -40°C ~ 125°C (TA) | High-Side or Low-Side | - | IGBT | - | 9.2ns,7.9ns | 0.75V,4.3V | 7.8A,6.8A |