Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Découvrez les produits 108
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX5075CAUA
Maxim Integrated
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER FET P-P 8-UMAX
Tube - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX5075CAUA-T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER FET P-P 8-UMAX
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX5077AUD
Maxim Integrated
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRVR FET P-P 14-TSSOP
Tube - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-TSSOP-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX5077AUD-T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER FET P-P 14-TSSOP
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-TSSOP-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
UBA2032T/N2,118
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE 24SOIC
Tape & Reel (TR) - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 24-SOIC (0.295",7.50mm Width) 24-SO Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
UBA2032TS/N2,118
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE 28-SSOP
Tape & Reel (TR) - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
IR25603PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC HALF BRIDGE SELF OSC 8-DIP
Tube - 10 V ~ 15.6 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - 180mA,260mA
IR2154
Infineon Technologies
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 15.6 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -