- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 89
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 40ns，20ns | 1A，1A | ||
|
|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 40ns，20ns | 1A，1A | ||
|
|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 40ns，20ns | 1A，1A | ||
|
|
|
Maxim Integrated |
2,132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Synchronous | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 3A，3A | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 120ns，50ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
6,903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 120ns，50ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
6,903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
- | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 120ns，50ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
4,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
4,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
Tube | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 120ns，50ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
3,137
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRDG DVR SELF-OSC 8SOIC
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 80ns，45ns | - |
