- Voltage - Supply：
-
- Operating Temperature：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 17
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 120ns，50ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-DIP
|
10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 120ns，50ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 80ns，40ns | 125mA，250mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 80ns，40ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 80ns，45ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 80ns，40ns | 125mA，250mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC HALF BRIDGE DRIVER W/DIO 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | 80ns，45ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 17000 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 80ns，45ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 17000 MPQ: 1
|
IC DRIVER HALF BRIDGE DIP-8
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT，N-Channel MOSFET | 80ns，40ns | 125mA，250mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 80ns，45ns | 180mA，260mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -55°C ~ 150°C (TJ) | N-Channel MOSFET | 80ns，45ns | - |
