- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 51
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Maxim Integrated |
2,132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
- | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | 3A，3A | ||
|
|
|
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
1,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-SOIC
|
- | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
|
|
|
Infineon Technologies |
3,137
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRDG DVR SELF-OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
1,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-DIP
|
- | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
|
|
|
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
STMicroelectronics |
1,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRDG HV W/OSC 8DIP
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | Through Hole | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-DIP
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
Maxim Integrated |
180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 14-TSSOP
|
- | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-TSSOP-EP | Surface Mount | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | 3A，3A | ||
|
|
|
Infineon Technologies |
1,007
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR HALF BRDG HV OSC 8-SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
|
|
|
Infineon Technologies |
258
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8SOI
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
STMicroelectronics |
884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR W/OSC 8 SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
|
|
|
STMicroelectronics |
365
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG W/OSC 8-DIP
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | Through Hole | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
|
|
|
Infineon Technologies |
4
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR FULL BRDG SELF OSC 14SOIC
|
- | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | 180mA，260mA | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVR HALF BRDGE HV OSC 8SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA |
