- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 30
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Automotive,AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns,20ns | - | 1A,1A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns,50ns | - | 180mA,260mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | 180mA,260mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-SOIC
|
- | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns,50ns | 4.7V,9.3V | 180mA,260mA | ||||
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
- | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | - | 3A,3A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF-BRG W/OSC HV 8-SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | - | - | 170mA,270mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDG SELF OSC 8SOIC
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns,50ns | - | 180mA,260mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Automotive,AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns,20ns | - | 1A,1A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRIDGE W/OSC 8SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | - | - | 170mA,270mA | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG W/OSC 8-SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | - | - | 170mA,270mA | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRDG HV W/OSC 8SOIC
|
- | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | - | - | 170mA,270mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR FULL BRIDGE OSC 14-SOIC
|
- | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns,50ns | 4.7V,9.3V | 180mA,260mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 100V | 40ns,20ns | - | 1.2A,1.2A | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE 28-SSOP
|
- | 10.5 V ~ 13.5 V | -40°C ~ 150°C (TJ) | 28-SSOP (0.209",5.30mm Width) | 28-SSOP | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 550V | - | 2V,4V; 3V,6V | 180mA,200mA | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE 28-SSOP
|
- | 10.5 V ~ 13.5 V | -40°C ~ 150°C (TJ) | 28-SSOP (0.209",5.30mm Width) | 28-SSOP | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 550V | - | 2V,4V; 3V,6V | 180mA,200mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | - | 125mA,250mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | - | 125mA,250mA |