Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Découvrez les produits 108
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2153D
Infineon Technologies
Enquête
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-
MOQ: 200  MPQ: 1
IC HALF BRIDGE DRIVER W/DIO 8DIP
Tube - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2154S
Infineon Technologies
Enquête
-
-
MOQ: 95  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tube - 10 V ~ 15.6 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2085S
Infineon Technologies
Enquête
-
-
MOQ: 190  MPQ: 1
IC DRVR HALF-BRDG SELF-OSC 8SOIC
Tube Automotive,AEC-Q100 10 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 100V 40ns,20ns - 1A,1A
IR2085STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF-BRDG SELF-OSC 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 100V 40ns,20ns - 1A,1A
E-L6569
STMicroelectronics
Enquête
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-
MOQ: 2000  MPQ: 1
IC DRVR HALF BRDG HV W/OSC 8DIP
Tube - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-Mini DIP Through Hole Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
E-L6571BD013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG W/OSC 8-SOIC
Tape & Reel (TR) - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
E-L6571BD013TR
STMicroelectronics
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRDG W/OSC 8-SOIC
Cut Tape (CT) - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
E-L6571BD013TR
STMicroelectronics
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRDG W/OSC 8-SOIC
- - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
IR2155PBF
Infineon Technologies
Enquête
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MOQ: 17000  MPQ: 1
IC DRIVER HALF BRIDGE OSC 8DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,45ns - 250mA,500mA
E-L6569D
STMicroelectronics
Enquête
-
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MOQ: 2000  MPQ: 1
IC DRVR HALF BRIDGE W/OSC 8-SOIC
Tube - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
E-L6571BD
STMicroelectronics
Enquête
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MOQ: 2000  MPQ: 1
IC DRVR HALF BRIDGE W/OSC 8-SOIC
Tube - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
MAX5077AUD+T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC DRVR FET P-P 14-TSSOP
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-TSSOP-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX5075AAUA
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC DRVR FET P-P 8-UMAX
Tube - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
IR2086SPBF
Infineon Technologies
Enquête
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-
MOQ: 180  MPQ: 1
IC DVR FULL BRIDGE HI/LOW 16SOIC
Tube - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 100V 40ns,20ns - 1.2A,1.2A
IR2151SPBF
Infineon Technologies
Enquête
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MOQ: 2565  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR2151PBF
Infineon Technologies
Enquête
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MOQ: 17000  MPQ: 1
IC DRIVER HALF BRIDGE DIP-8
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
AUIR2085S
Infineon Technologies
Enquête
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-
MOQ: 190  MPQ: 1
IC DVR HALF-BRDG SELF OSC 8SOIC
Tube Automotive,AEC-Q100 10 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Synchronous Half-Bridge 2 N-Channel MOSFET 100V 40ns,20ns - 1A,1A
MAX5075AAUA-T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC DRVR FET P-P 8-UMAX
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX5075BAUA
Maxim Integrated
Enquête
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MOQ: 1  MPQ: 1
IC DRVR FET P-P 8-UMAX
Tube - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX5075BAUA-T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER FET P-P 8-UMAX
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A