Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Découvrez les produits 108
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UBA2033TS/N2,118
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE 28-SSOP
Tape & Reel (TR) - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
UBA2033TS/N2,118
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FULL BRIDGE DRIVER 28-SSOP
Cut Tape (CT) - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
UBA2033TS/N2,118
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FULL BRIDGE DRIVER 28-SSOP
- - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
UBA2032TS/N3,118
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE 28-SSOP
Tape & Reel (TR) - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
UBA2032TS/N3,118
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FULL BRIDGE DRIVER 28-SSOP
Cut Tape (CT) - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
UBA2032TS/N3,118
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FULL BRIDGE DRIVER 28-SSOP
- - 10.5 V ~ 13.5 V -40°C ~ 150°C (TJ) 28-SSOP (0.209",5.30mm Width) 28-SSOP Surface Mount Synchronous Half-Bridge 4 N-Channel MOSFET 550V - 2V,4V; 3V,6V 180mA,200mA
IR2151
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR2153
Infineon Technologies
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 15.6 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,40ns - -
IR2151S
Infineon Technologies
Enquête
-
-
MOQ: 380  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR2151STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR21531
Infineon Technologies
Enquête
-
-
MOQ: 350  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR21531S
Infineon Technologies
Enquête
-
-
MOQ: 380  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tube - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2153S
Infineon Technologies
Enquête
-
-
MOQ: 190  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tube - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2153STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tape & Reel (TR) - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2155
Infineon Technologies
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,45ns - 250mA,500mA
IR2152
Infineon Technologies
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR2152S
Infineon Technologies
Enquête
-
-
MOQ: 95  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR2152STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns - 125mA,250mA
IR21531D
Infineon Technologies
Enquête
-
-
MOQ: 350  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR21531STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8SOIC
Tape & Reel (TR) - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -