- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
2,990
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT POWER DRIVER 8-DIP
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Maxim Integrated |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8TDFN
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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Maxim Integrated |
4,800
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8TDFN
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Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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Maxim Integrated |
4,800
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8TDFN
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- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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Maxim Integrated |
201
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR INV/NONINV 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Infineon Technologies |
1,086
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Maxim Integrated |
171
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
163
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 12-TQFN
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
187
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
3,056
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
3,056
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Texas Instruments |
3,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
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IC GATE DVR LOW SIDE 7.6A SOT23-
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Texas Instruments |
5,850
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW SIDE 7.6A SOT23-
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Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Texas Instruments |
5,850
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW SIDE 7.6A SOT23-
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- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Infineon Technologies |
4,250
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 200V 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Analog Devices Inc. |
3,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
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Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Analog Devices Inc. |
3,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
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Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Analog Devices Inc. |
3,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8MSOP
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- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Maxim Integrated |
2,180
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8TDFN
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Strip | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A |
