- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 42
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Single | Low-Side | 1 | N-Channel MOSFET | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Single | Low-Side | 1 | N-Channel MOSFET | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
- | EiceDriver | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Single | Low-Side | 1 | N-Channel MOSFET | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
DRIVER IC
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Single | Half-Bridge,Low-Side | 1 | N-Channel,P-Channel MOSFET | 6.5ns,4.5ns | 1.2V,1.9V | 4A,8A | ||||
Infineon Technologies |
2,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Single | Half-Bridge,Low-Side | 1 | N-Channel,P-Channel MOSFET | 6.5ns,4.5ns | 1.2V,1.9V | 4A,8A | ||||
Infineon Technologies |
2,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Single | Half-Bridge,Low-Side | 1 | N-Channel,P-Channel MOSFET | 6.5ns,4.5ns | 1.2V,1.9V | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | PG-SOT23-5-1 | Single | Low-Side | 1 | N-Channel MOSFET | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
879
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | PG-SOT23-5-1 | Single | Low-Side | 1 | N-Channel MOSFET | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
879
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | EiceDriver | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | PG-SOT23-5-1 | Single | Low-Side | 1 | N-Channel MOSFET | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW-SIDE SOT23-6
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 1.2V,1.9V | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW-SIDE SOT23-6
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Single | Half-Bridge,Low-Side | 1 | N-Channel,P-Channel MOSFET | 6.5ns,4.5ns | 1.2V,1.9V | 4A,8A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
- | - | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | 10A,10A | ||||
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | - | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | 10A,10A | ||||
Microchip Technology |
1,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-MLF
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad,8-MLF? | 8-MLF? (2x2) | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns,18ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns,18ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-MLF
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad,8-MLF? | 8-MLF? (2x2) | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns,18ns | 0.8V,2.4V | 1.5A,1.5A |