- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 187
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
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Texas Instruments |
28,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Single | Low-Side | 1 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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|
|
Texas Instruments |
11,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR TINY 7A 6WSON
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Single | Low-Side | 1 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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|
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Texas Instruments |
8,254
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 7A 8MSOP
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Single | Low-Side | 1 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.3V | 3A，7A | ||
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Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
|
Texas Instruments |
18,812
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
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Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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Texas Instruments |
7,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Infineon Technologies |
14,090
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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|
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Texas Instruments |
11,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
|
Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
|
Texas Instruments |
7,131
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Infineon Technologies |
28,842
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
Texas Instruments |
21,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 6SON
|
- | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 5ns，5ns | 1.3V，1.85V | 4A，6A | ||
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|
|
Texas Instruments |
17,912
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LMG1020YFFR BEARCAT 6-PIN WCSP
|
- | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA，DSBGA | 6-DSBGA (1.2x0.8) | Independent | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 375ps，350ps | 1.8V，1.7V | 7A，5A | ||
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|
|
Renesas Electronics America Inc. |
3,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
- | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A |
